| PART |
Description |
Maker |
| 2SA1588 |
Excellent hFE linearity.Collector-base voltage VCBO -35 V
|
TY Semiconductor Co., Ltd
|
| 2SC3617 |
World standard miniature package. High hFE hFE=800 to 1600.
|
TY Semiconductor Co., Ltd
|
| FCX619 |
2W power dissipation, Excellent HFE characteristics up to 6 amps
|
TY Semiconductor Co., Ltd
|
| 2SD1815 |
Low collector-to-emitter saturation voltage. Excllent linearity of hFE.
|
TY Semiconductor Co., L...
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCX55 BCX56 BCX55-16 BCX54 BCX54-10 BCX54-16 BCX56 |
General Purpose Transistors - SOT89; VCEO=60 V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160
NPN Silicon AF Transistors NPN AF硅晶体管
NPN Silicon AF Transistors
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SC3422 |
Good Linearity of hFE
|
Inchange Semiconductor ...
|
| BCP69 BCP69-10 BCP69-16 BCP69-25 |
PNP Silicon AF Transistor
General Purpose Transistors - SOT223; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT223; VCEO=20V; hFE=85..160
General Purpose Transistors - SOT223; VCEO=20V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9 |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
|
Continental Device India Limited
|
| CN301 CN304 CN300 CN302 CN303 |
0.300W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 20 - hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 35V Vceo, A Ic, 50 - 300 hFE
0.300W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, A Ic, 50 - 300 hFE
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
Continental Device Indi...
|
